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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	PHP143NQ04T,127	RFQ VIEW	PDF RFQ	941 In-stock	NXP USA Inc.	MOSFET N-CH 40V 75A TO220AB		TrenchMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	200W (Tc)	N-Channel	-	40V	75A (Tc)	5.2 mOhm @ 25A, 10V	4V @ 1mA	52nC @ 10V	2840pF @ 25V	10V	±20V
	IRF1010ZL	RFQ VIEW	PDF RFQ	2,922 In-stock	Infineon Technologies	MOSFET N-CH 55V 75A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	140W (Tc)	N-Channel	-	55V	75A (Tc)	7.5 mOhm @ 75A, 10V	4V @ 250µA	95nC @ 10V	2840pF @ 25V	10V	±20V
	IRFU1010ZPBF	RFQ VIEW	PDF RFQ	3,388 In-stock	Infineon Technologies	MOSFET N-CH 55V 42A I-PAK		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	140W (Tc)	N-Channel	-	55V	42A (Tc)	7.5 mOhm @ 42A, 10V	4V @ 100µA	95nC @ 10V	2840pF @ 25V	10V	±20V
	IRFU1010Z	RFQ VIEW	PDF RFQ	1,430 In-stock	Infineon Technologies	MOSFET N-CH 55V 42A I-PAK		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	IPAK (TO-251)	140W (Tc)	N-Channel	-	55V	42A (Tc)	7.5 mOhm @ 42A, 10V	4V @ 100µA	95nC @ 10V	2840pF @ 25V	10V	±20V
	IRF1010Z	RFQ VIEW	PDF RFQ	2,492 In-stock	Infineon Technologies	MOSFET N-CH 55V 75A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	140W (Tc)	N-Channel	-	55V	75A (Tc)	7.5 mOhm @ 75A, 10V	4V @ 250µA	95nC @ 10V	2840pF @ 25V	10V	±20V
	IRF1010ZLPBF	RFQ VIEW	PDF RFQ	2,011 In-stock	Infineon Technologies	MOSFET N-CH 55V 75A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	140W (Tc)	N-Channel	-	55V	75A (Tc)	7.5 mOhm @ 75A, 10V	4V @ 250µA	95nC @ 10V	2840pF @ 25V	10V	±20V
	AUIRF1010Z	RFQ VIEW	PDF RFQ	2,322 In-stock	Infineon Technologies	MOSFET N-CH 55V 75A TO220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	140W (Tc)	N-Channel	-	55V	75A (Tc)	7.5 mOhm @ 75A, 10V	4V @ 250µA	95nC @ 10V	2840pF @ 25V	-	-
	IRF1010ZPBF	RFQ VIEW	PDF RFQ	2,100 In-stock	Infineon Technologies	MOSFET N-CH 55V 75A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	140W (Tc)	N-Channel	-	55V	75A (Tc)	7.5 mOhm @ 75A, 10V	4V @ 250µA	95nC @ 10V	2840pF @ 25V	10V	±20V
	IXTH10P50P	RFQ VIEW	PDF RFQ	2,326 In-stock	IXYS	MOSFET P-CH 500V 10A TO-247		PolarP™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	P-Channel	-	500V	10A (Tc)	1 Ohm @ 5A, 10V	4V @ 250µA	50nC @ 10V	2840pF @ 25V	10V	±20V
	IXTQ10P50P	RFQ VIEW	PDF RFQ	2,872 In-stock	IXYS	MOSFET P-CH 500V 10A TO-3P		PolarP™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P	300W (Tc)	P-Channel	-	500V	10A (Tc)	1 Ohm @ 5A, 10V	4V @ 250µA	50nC @ 10V	2840pF @ 25V	10V	±20V
	IXTP10P50P	RFQ VIEW	PDF RFQ	2,449 In-stock	IXYS	MOSFET P-CH 500V 10A TO-220		PolarP™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	300W (Tc)	P-Channel	-	500V	10A (Tc)	1 Ohm @ 5A, 10V	4V @ 250µA	50nC @ 10V	2840pF @ 25V	10V	±20V

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