- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,567
In-stock
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Infineon Technologies | MOSFET N-CH 100V 43A TO220-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 71W (Tc) | N-Channel | - | 100V | 43A (Tc) | 18 mOhm @ 33A, 10V | 3.5V @ 33µA | 25nC @ 10V | 1800pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,062
In-stock
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STMicroelectronics | MOSFET N-CH 600V 17A TO-220 | FDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 140W (Tc) | N-Channel | - | 600V | 17A (Tc) | 220 mOhm @ 8.5A, 10V | 5V @ 250µA | 60nC @ 10V | 1800pF @ 50V | 10V | ±25V | |||
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VIEW |
2,633
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 52A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 100V | 52A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | |||
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VIEW |
1,767
In-stock
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STMicroelectronics | MOSFET N-CH 600V 20A TO-220 | MDmesh™ II | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 140W (Tc) | N-Channel | - | 600V | 20A (Tc) | 165 mOhm @ 10A, 10V | 4V @ 250µA | 60nC @ 10V | 1800pF @ 50V | 10V | ±30V |