Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
NTD4960N-35G
RFQ
VIEW
RFQ
3,944
In-stock
ON Semiconductor MOSFET N-CH 30V 11.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 1.07W (Ta), 35.71W (Tc) N-Channel - 30V 8.9A (Ta), 55A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 22nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V
NTD4960N-1G
RFQ
VIEW
RFQ
2,123
In-stock
ON Semiconductor MOSFET N-CH 30V 11.1A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.07W (Ta), 35.71W (Tc) N-Channel - 30V 8.9A (Ta), 55A (Tc) 8 mOhm @ 30A, 10V 2.5V @ 250µA 22nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V
IRL3302
RFQ
VIEW
RFQ
3,728
In-stock
Infineon Technologies MOSFET N-CH 20V 39A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 57W (Tc) N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V
IRL3302L
RFQ
VIEW
RFQ
2,789
In-stock
Vishay Siliconix MOSFET N-CH 20V 39A TO-262 - Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 57W (Tc) N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V
IRL3302PBF
RFQ
VIEW
RFQ
3,714
In-stock
Infineon Technologies MOSFET N-CH 20V 39A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 57W (Tc) N-Channel - 20V 39A (Tc) 20 mOhm @ 23A, 7V 700mV @ 250µA 31nC @ 4.5V 1300pF @ 15V 4.5V, 7V ±10V