- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
;;3.jpg)
|
VIEW |
1,841
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 33A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 57W (Tc) | N-Channel | 30V | 33A (Tc) | 31 mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
2,947
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 33A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 57W (Tc) | N-Channel | 30V | 33A (Tc) | 31 mOhm @ 18A, 10V | 4V @ 250µA | 29nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,014
In-stock
|
ON Semiconductor | MOSFET P-CH 60V 12A IPAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 55W (Tj) | P-Channel | 60V | 12A (Ta) | 180 mOhm @ 6A, 10V | 4V @ 250µA | 30nC @ 10V | 750pF @ 25V | 10V | ±20V | |||
