Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLU2905ZPBF
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Infineon Technologies MOSFET N-CH 55V 42A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel 55V 42A (Tc) 13.5 mOhm @ 36A, 10V 3V @ 250µA 35nC @ 5V 1570pF @ 25V 4.5V, 10V ±16V
IRLIZ34GPBF
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3,711
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Vishay Siliconix MOSFET N-CH 60V 20A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 42W (Tc) N-Channel 60V 20A (Tc) 50 mOhm @ 12A, 5V 2V @ 250µA 35nC @ 5V 1600pF @ 25V 4V, 5V ±10V
IRLZ34PBF
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1,855
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Vishay Siliconix MOSFET N-CH 60V 30A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 88W (Tc) N-Channel 60V 30A (Tc) 50 mOhm @ 18A, 5V 2V @ 250µA 35nC @ 5V 1600pF @ 25V 4V, 5V ±10V
NDP6020P
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2,489
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ON Semiconductor MOSFET P-CH 20V 24A TO-220 - Active Tube MOSFET (Metal Oxide) -65°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 60W (Tc) P-Channel 20V 24A (Tc) 50 mOhm @ 12A, 4.5V 1V @ 250µA 35nC @ 5V 1590pF @ 10V 4.5V ±8V