Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK9516-75B,127
RFQ
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RFQ
2,483
In-stock
NXP USA Inc. MOSFET N-CH 75V 67A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 157W (Tc) N-Channel 75V 67A (Tc) 14 mOhm @ 25A, 10V 2V @ 1mA 35nC @ 5V 4034pF @ 25V 4.5V, 10V ±15V
IRL3215
RFQ
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RFQ
2,715
In-stock
Infineon Technologies MOSFET N-CH 150V 12A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel 150V 12A (Tc) 166 mOhm @ 7.2A, 10V 2V @ 250µA 35nC @ 5V 775pF @ 25V 4V, 10V ±16V
IRLZ34
RFQ
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RFQ
2,639
In-stock
Vishay Siliconix MOSFET N-CH 60V 30A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 88W (Tc) N-Channel 60V 30A (Tc) 50 mOhm @ 18A, 5V 2V @ 250µA 35nC @ 5V 1600pF @ 25V 4V, 5V ±10V
IRLZ34PBF
RFQ
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RFQ
1,855
In-stock
Vishay Siliconix MOSFET N-CH 60V 30A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 88W (Tc) N-Channel 60V 30A (Tc) 50 mOhm @ 18A, 5V 2V @ 250µA 35nC @ 5V 1600pF @ 25V 4V, 5V ±10V