- Manufacture :
- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,062
In-stock
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Infineon Technologies | TRENCH_MOSFETS | StrongIRFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 341W (Tc) | N-Channel | - | 100V | - | 1.7 mOhm @ 100A, 10V | 3.8V @ 278µA | 270nC @ 10V | 12020pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
1,131
In-stock
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Texas Instruments | MOSFET N-CH 40V 200A TO220-3 | NexFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 250W (Ta) | N-Channel | - | 40V | 200A (Ta) | 1.7 mOhm @ 100A, 10V | 2.3V @ 250µA | 75nC @ 4.5V | 11400pF @ 20V | 4.5V, 10V | ±20V | |||
