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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	BUK9E1R8-40E,127	RFQ VIEW	PDF RFQ	992 In-stock	NXP USA Inc.	MOSFET N-CH 40V 120A I2PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	349W (Tc)	N-Channel	40V	120A (Tc)	1.7 mOhm @ 25A, 10V	2.1V @ 1mA	120nC @ 5V	16400pF @ 25V	5V, 10V	±10V
	BUK951R9-40E,127	RFQ VIEW	PDF RFQ	1,419 In-stock	NXP USA Inc.	MOSFET N-CH 40V 120A TO220AB		TrenchMOS™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	349W (Tc)	N-Channel	40V	120A (Tc)	1.7 mOhm @ 25A, 10V	2.1V @ 1mA	120nC @ 5V	16400pF @ 25V	5V, 10V	±10V
	PSMN1R9-40PLQ	RFQ VIEW	PDF RFQ	3,484 In-stock	Nexperia USA Inc.	MOSFET N-CH 40V 150A SOT78		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	349W (Tc)	N-Channel	40V	150A (Tc)	1.7 mOhm @ 25A, 10V	2.1V @ 1mA	120nC @ 5V	13200pF @ 25V	4.5V, 10V	±20V
	PSMN1R6-30PL,127	RFQ VIEW	PDF RFQ	3,132 In-stock	Nexperia USA Inc.	MOSFET N-CH 30V 100A TO220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	306W (Tc)	N-Channel	30V	100A (Tc)	1.7 mOhm @ 25A, 10V	2.15V @ 1mA	212nC @ 10V	12493pF @ 12V	4.5V, 10V	±20V

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