Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH150N17T
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RFQ
1,148
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IXYS MOSFET N-CH 175V 150A TO-247 TrenchHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel - 175V 150A (Tc) 12 mOhm @ 75A, 10V 5V @ 1mA 155nC @ 10V 9800pF @ 25V 10V ±30V
IXFH150N17T
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RFQ
1,745
In-stock
IXYS MOSFET N-CH 175V 150A TO-247 TrenchHV™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 830W (Tc) N-Channel - 175V 150A (Tc) 12 mOhm @ 75A, 10V 5V @ 3mA 155nC @ 10V 9800pF @ 25V 10V -
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RFQ
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RFQ
860
In-stock
IXYS MOSFET N-CH 55V 150A I4-PAC-5 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole i4-Pac™-5 ISOPLUS i4-PAC™ - N-Channel - 55V 150A (Tc) 4.9 mOhm @ 110A, 10V 4V @ 1mA 86nC @ 10V - 10V ±20V
IRL7833LPBF
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RFQ
2,919
In-stock
Infineon Technologies MOSFET N-CH 30V 150A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 140W (Tc) N-Channel - 30V 150A (Tc) 3.8 mOhm @ 38A, 10V 2.3V @ 250µA 47nC @ 4.5V 4170pF @ 15V 4.5V, 10V ±20V
STD150NH02L-1
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RFQ
2,260
In-stock
STMicroelectronics MOSFET N-CH 24V 150A IPAK STripFET™ III Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 125W (Tc) N-Channel - 24V 150A (Tc) 3.5 mOhm @ 75A, 10V 1.8V @ 250µA 93nC @ 10V 4450pF @ 15V 5V, 10V ±20V