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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,609
In-stock
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Infineon Technologies | MOSFET N-CH 60V 84A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 60V | 84A (Tc) | 12 mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | 3210pF @ 25V | 10V | ±20V | |||
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VIEW |
3,105
In-stock
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Infineon Technologies | MOSFET N-CH 12V 84A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 88W (Tc) | N-Channel | - | 12V | 84A (Tc) | 8.5 mOhm @ 15A, 4.5V | 1.9V @ 250µA | 41nC @ 5V | 2490pF @ 6V | 2.8V, 4.5V | ±12V | |||
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VIEW |
2,820
In-stock
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STMicroelectronics | MOSFET N-CH 60V 84A TO-220AB | DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 136W (Tc) | N-Channel | - | 60V | 84A (Tc) | 6.8 mOhm @ 38.5A, 10V | 4V @ 250µA | 74.9nC @ 10V | 4295pF @ 25V | 10V | ±20V |