- Manufacture :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,485
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 160W (Tc) | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | |||
|
VIEW |
3,156
In-stock
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Infineon Technologies | MOSFET N CH 60V 110A TO-220AB | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 160W (Tc) | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | |||
|
VIEW |
1,830
In-stock
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STMicroelectronics | MOSFET N-CH 60V TO-220 | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 120W (Tc) | N-Channel | - | 60V | 110A (Tc) | 5.8 mOhm @ 50A, 10V | 4.5V @ 250µA | 122nC @ 10V | 7480pF @ 25V | 10V | ±20V | |||
