- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,001
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
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VIEW |
2,621
In-stock
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Infineon Technologies | MOSFET N-CH 55V 98A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | |||
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VIEW |
728
In-stock
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STMicroelectronics | MOSFET N-CH 80V 110A TO-220 | STripFET™ F6 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 200W (Tc) | N-Channel | - | 80V | 110A (Tc) | 6.5 mOhm @ 55A, 10V | 4.5V @ 250µA | 150nC @ 10V | 9130pF @ 40V | 10V | ±20V | |||
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VIEW |
768
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
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VIEW |
1,106
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 59A, 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,605
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
