- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,001
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
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VIEW |
3,710
In-stock
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Vishay Siliconix | MOSFET N-CH 20V 110A TO-262 | - | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 140W (Tc) | N-Channel | - | 20V | 110A (Tc) | 7 mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | 4.5V, 7V | ±10V | |||
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VIEW |
3,485
In-stock
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Infineon Technologies | MOSFET N-CH 60V 120A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 160W (Tc) | N-Channel | - | 60V | 110A (Tc) | 5.1 mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | 4555pF @ 25V | 6V, 10V | ±20V | |||
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VIEW |
905
In-stock
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Infineon Technologies | MOSFET N-CH 20V 110A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,183
In-stock
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Infineon Technologies | MOSFET N-CH 20V 110A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 120W (Tc) | N-Channel | - | 20V | 110A (Tc) | 6 mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
768
In-stock
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Infineon Technologies | MOSFET N-CH 55V 110A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 55V | 110A (Tc) | 8 mOhm @ 62A, 10V | 4V @ 250µA | 146nC @ 10V | 3247pF @ 25V | 10V | ±20V | |||
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VIEW |
1,666
In-stock
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ON Semiconductor | MOSFET N-CH 40V 110A TO262AB | Automotive, AEC-Q101, PowerTrench® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 176W (Tj) | N-Channel | - | 40V | 110A (Tc) | 2.2 mOhm @ 80A, 10V | 4V @ 250µA | 138nC @ 10V | 7710pF @ 25V | 10V | ±20V | |||
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VIEW |
2,515
In-stock
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STMicroelectronics | MOSFET N-CH 100V 110A I2PAK | STripFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 250W (Tc) | N-Channel | - | 100V | 110A (Tc) | 4.2 mOhm @ 55A, 10V | 4.5V @ 250µA | 117nC @ 10V | 8115pF @ 50V | 10V | ±20V |