- Series :
- Part Status :
- Technology :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Vgs (Max) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
783
In-stock
|
Cree/Wolfspeed | MOSFET N-CH 1200V 42A TO-247-3 | Z-FET™ | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 135°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 215W (Tc) | N-Channel | 1200V | 42A (Tc) | 110 mOhm @ 20A, 20V | 4V @ 1mA | 90.8nC @ 20V | 1915pF @ 800V | 20V | +25V, -5V | |||
|
VIEW |
1,226
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 42A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | 120V | 42A (Tc) | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | 10V | ±20V | |||
|
VIEW |
3,512
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 55V 42A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 99W (Tc) | N-Channel | 55V | 42A (Tc) | 28 mOhm @ 25A, 10V | 4V @ 1mA | - | 1165pF @ 25V | 10V | ±20V |