Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTP42N15T
RFQ
VIEW
RFQ
1,162
In-stock
IXYS MOSFET N-CH 150V 42A TO-220 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 150V 42A (Tc) 45 mOhm @ 500mA, 10V 4.5V @ 250µA 21nC @ 10V 1880pF @ 25V 10V ±30V
NTP6413ANG
RFQ
VIEW
RFQ
810
In-stock
ON Semiconductor MOSFET N-CH 100V 42A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 136W (Tc) N-Channel - 100V 42A (Tc) 28 mOhm @ 42A, 10V 4V @ 250µA 51nC @ 10V 1800pF @ 25V 10V ±20V
BUK7528-55A,127
RFQ
VIEW
RFQ
3,512
In-stock
Nexperia USA Inc. MOSFET N-CH 55V 42A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 99W (Tc) N-Channel - 55V 42A (Tc) 28 mOhm @ 25A, 10V 4V @ 1mA - 1165pF @ 25V 10V ±20V
IXTP42N25P
RFQ
VIEW
RFQ
3,416
In-stock
IXYS MOSFET N-CH 250V 42A TO-220 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 250V 42A (Tc) 84 mOhm @ 500mA, 10V 5.5V @ 250µA 70nC @ 10V 2300pF @ 25V 10V ±20V
IRF1310NPBF
RFQ
VIEW
RFQ
3,596
In-stock
Infineon Technologies MOSFET N-CH 100V 42A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 100V 42A (Tc) 36 mOhm @ 22A, 10V 4V @ 250µA 110nC @ 10V 1900pF @ 25V 10V ±20V