Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STMicroelectronics MOSFET N-CH 600V 42A TO-247 MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 300W (Tc) N-Channel - 600V 42A (Tc) 70 mOhm @ 21A, 10V 4V @ 250µA 70nC @ 10V 3060pF @ 100V 10V ±25V
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STMicroelectronics MOSFET N-CH 300V 42A TO247 STripFET™ II Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-247-3 TO-247 300W (Tc) N-Channel - 300V 42A (Tc) 75 mOhm @ 17A, 10V 4V @ 250µA 90nC @ 10V 3200pF @ 25V 10V ±20V
STWA57N65M5
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STMicroelectronics MOSFET N-CH 650V 42A TO247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 250W (Tc) N-Channel - 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 10V ±25V
STW57N65M5
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STMicroelectronics MOSFET N-CH 650V 42A TO-247 MDmesh™ V Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 250W (Tc) N-Channel - 650V 42A (Tc) 63 mOhm @ 21A, 10V 5V @ 250µA 98nC @ 10V 4200pF @ 100V 10V ±25V