Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Renesas Electronics America MOSFET P-CH 60V 36A TO-220 - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Isolated Tab TO-220 Isolated Tab 2W (Ta), 32W (Tc) P-Channel 60V 36A (Tc) 20 mOhm @ 18A, 10V - 87nC @ 10V 4600pF @ 10V 4V, 10V ±20V
IRFU7546PBF
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1,641
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Infineon Technologies MOSFET N CH 60V 56A I-PAK HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 99W (Tc) N-Channel 60V 56A (Tc) 7.9 mOhm @ 43A, 10V 3.7V @ 100µA 87nC @ 10V 3020pF @ 25V 6V, 10V ±20V
IRFB7546PBF
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729
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Infineon Technologies MOSFET N-CH 60V 75A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 99W (Tc) N-Channel 60V 75A (Tc) 7.3 mOhm @ 45A, 10V 3.7V @ 100µA 87nC @ 10V 3000pF @ 25V 6V, 10V ±20V
TK70D06J1(Q)
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3,959
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 70A TO220W - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220(W) 45W (Tc) N-Channel 60V 70A (Ta) 6.4 mOhm @ 35A, 10V 2.3V @ 1mA 87nC @ 10V 5450pF @ 10V 4.5V, 10V ±20V