Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPP90N06S4L04AKSA2
RFQ
VIEW
RFQ
3,683
In-stock
Infineon Technologies MOSFET N-CH TO220-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 150W (Tc) N-Channel - 60V 90A (Tc) 3.7 mOhm @ 90A, 10V 2.2V @ 90µA 170nC @ 10V 13000pF @ 25V 4.5V, 10V ±16V
IPP90N06S4L04AKSA1
RFQ
VIEW
RFQ
3,474
In-stock
Infineon Technologies MOSFET N-CH 60V 90A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 150W (Tc) N-Channel - 60V 90A (Tc) 3.7 mOhm @ 90A, 10V 2.2V @ 90µA 170nC @ 10V 13000pF @ 25V 4.5V, 10V ±16V
IPI90N06S4L04AKSA1
RFQ
VIEW
RFQ
3,861
In-stock
Infineon Technologies MOSFET N-CH 60V 90A TO262-3 OptiMOS™ Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 150W (Tc) N-Channel - 60V 90A (Tc) 3.7 mOhm @ 90A, 10V 2.2V @ 90µA 170nC @ 10V 13000pF @ 25V 4.5V, 10V ±16V
NTP5426NG
RFQ
VIEW
RFQ
642
In-stock
ON Semiconductor MOSFET N-CH 60V 120A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 215W (Tc) N-Channel - 60V 120A (Tc) 6 mOhm @ 60A, 10V 4V @ 250µA 170nC @ 10V 5800pF @ 25V 10V ±20V
IRFB4215
RFQ
VIEW
RFQ
2,298
In-stock
Infineon Technologies MOSFET N-CH 60V 115A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 270W (Tc) N-Channel - 60V 115A (Tc) 9 mOhm @ 54A, 10V 4V @ 250µA 170nC @ 10V 4080pF @ 25V 10V ±20V
IRFSL3206PBF
RFQ
VIEW
RFQ
1,506
In-stock
Infineon Technologies MOSFET N-CH 60V 120A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 300W (Tc) N-Channel - 60V 120A (Tc) 3 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6540pF @ 50V 10V ±20V
IRFB4215PBF
RFQ
VIEW
RFQ
3,391
In-stock
Infineon Technologies MOSFET N-CH 60V 115A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 270W (Tc) N-Channel - 60V 115A (Tc) 9 mOhm @ 54A, 10V 4V @ 250µA 170nC @ 10V 4080pF @ 25V 10V ±20V
IRFB3206PBF
RFQ
VIEW
RFQ
2,057
In-stock
Infineon Technologies MOSFET N-CH 60V 120A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 60V 120A (Tc) 3 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6540pF @ 50V 10V ±20V
IPI90N06S4L04AKSA2
RFQ
VIEW
RFQ
900
In-stock
Infineon Technologies MOSFET N-CH 60V 80A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 150W (Tc) N-Channel - 60V 90A (Tc) 3.7 mOhm @ 90A, 10V 2.2V @ 90µA 170nC @ 10V 13000pF @ 25V 4.5V, 10V ±16V
IRFB3206GPBF
RFQ
VIEW
RFQ
1,145
In-stock
Infineon Technologies MOSFET N-CH 60V 120A TO220AB HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 300W (Tc) N-Channel - 60V 120A (Tc) 3 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6540pF @ 50V 10V ±20V
IRFP3206PBF
RFQ
VIEW
RFQ
957
In-stock
Infineon Technologies MOSFET N-CH 60V 120A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 280W (Tc) N-Channel - 60V 120A (Tc) 3 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6540pF @ 50V 10V ±20V