Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPU30P06P
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2,415
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Infineon Technologies MOSFET P-CH 60V 30A IPAK SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 125W (Tc) P-Channel - 60V 30A (Tc) 75 mOhm @ 21.5A, 10V 4V @ 1.7mA 48nC @ 10V 1535pF @ 25V 10V ±20V
NTD24N06-001
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1,949
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ON Semiconductor MOSFET N-CH 60V 24A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.36W (Ta), 62.5W (Tj) N-Channel - 60V 24A (Ta) 42 mOhm @ 10A, 10V 4V @ 250µA 48nC @ 10V 1200pF @ 25V 10V ±20V
NTD24N06-1G
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RFQ
1,450
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ON Semiconductor MOSFET N-CH 60V 24A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 1.36W (Ta), 62.5W (Tj) N-Channel - 60V 24A (Ta) 42 mOhm @ 10A, 10V 4V @ 250µA 48nC @ 10V 1200pF @ 25V 10V ±20V
IPA093N06N3GXKSA1
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RFQ
1,221
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Infineon Technologies MOSFET N-CH 60V 43A TO220-3-31 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 33W (Tc) N-Channel - 60V 43A (Tc) 9.3 mOhm @ 40A, 10V 4V @ 34µA 48nC @ 10V 3900pF @ 30V 10V ±20V