Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK50E06K3A,S1X(S
RFQ
VIEW
RFQ
2,901
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 50A TO-220AB U-MOSIV Active Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220-3 - N-Channel 60V 50A (Tc) 8.5 mOhm @ 25A, 10V - 54nC @ 10V - - -
PHP73N06T,127
RFQ
VIEW
RFQ
2,135
In-stock
NXP USA Inc. MOSFET N-CH 60V 73A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 166W (Tc) N-Channel 60V 73A (Tc) 14 mOhm @ 25A, 10V 4V @ 1mA 54nC @ 10V 2464pF @ 25V 10V ±20V
AOI409
RFQ
VIEW
RFQ
779
In-stock
Alpha & Omega Semiconductor Inc. MOSFET P-CH 60V 26A TO251A - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 2.5W (Ta), 60W (Tc) P-Channel 60V 26A (Tc) 40 mOhm @ 20A, 10V 2.4V @ 250µA 54nC @ 10V 3600pF @ 30V 4.5V, 10V ±20V