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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	STP80NE06-10	RFQ VIEW	PDF RFQ	3,576 In-stock	STMicroelectronics	MOSFET N-CH 60V 80A TO-220		-	Obsolete	Tube	MOSFET (Metal Oxide)	175°C (TJ)	Through Hole	TO-220-3	TO-220AB	150W (Tc)	N-Channel	-	60V	80A (Tc)	10 mOhm @ 40A, 10V	4V @ 250µA	140nC @ 10V	10000pF @ 25V	10V	±20V
	PSMN2R6-60PSQ	RFQ VIEW	PDF RFQ	1,283 In-stock	Nexperia USA Inc.	MOSFET N-CH 60V 150A TO-220		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	326W (Tc)	N-Channel	-	60V	150A (Tc)	2.6 mOhm @ 25A, 10V	4V @ 1mA	140nC @ 10V	7629pF @ 25V	10V	±20V
	TK100A06N1,S4X	RFQ VIEW	PDF RFQ	2,564 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 100A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	60V	100A (Tc)	2.7 mOhm @ 50A, 10V	4V @ 1mA	140nC @ 10V	10500pF @ 30V	10V	±20V
	TK100E06N1,S1X	RFQ VIEW	PDF RFQ	1,498 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 60V 100A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	255W (Tc)	N-Channel	-	60V	100A (Ta)	2.3 mOhm @ 50A, 10V	4V @ 1mA	140nC @ 10V	10500pF @ 30V	10V	±20V

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