Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SFT1446-H
RFQ
VIEW
RFQ
2,075
In-stock
ON Semiconductor MOSFET N-CH 60V 20A TP - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TP 1W (Ta), 23W (Tc) N-Channel - 60V 20A (Ta) 51 mOhm @ 10A, 10V 2.6V @ 1mA 16nC @ 10V 750pF @ 20V 4V, 10V ±20V
FKI06269
RFQ
VIEW
RFQ
2,145
In-stock
Sanken MOSFET N-CH 60V 24A TO-220F - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 29W (Tc) N-Channel - 60V 24A (Tc) 21.8 mOhm @ 15.8A, 10V 2.5V @ 250µA 16nC @ 10V 1050pF @ 25V 4.5V, 10V ±20V
TK30E06N1,S1X
RFQ
VIEW
RFQ
1,839
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 43A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 53W (Tc) N-Channel - 60V 43A (Ta) 15 mOhm @ 15A, 10V 4V @ 200µA 16nC @ 10V 1050pF @ 30V 10V ±20V
TK30A06N1,S4X
RFQ
VIEW
RFQ
2,995
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 30A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 25W (Tc) N-Channel - 60V 30A (Tc) 15 mOhm @ 15A, 10V 4V @ 200µA 16nC @ 10V 1050pF @ 30V 10V ±20V