- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,252
In-stock
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ON Semiconductor | MOSFET N-CH 60V 150MA TO-92 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | 400mW (Ta) | N-Channel | 60V | 150mA (Ta) | 7.5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 60pF @ 25V | 10V | ±20V | ||||
VIEW |
684
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 35A TO220NIS | U-MOSIII | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 35W (Tc) | N-Channel | 60V | 35A (Ta) | 12.5 mOhm @ 18A, 10V | 2.5V @ 1mA | 91nC @ 10V | 5120pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
1,755
In-stock
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Rohm Semiconductor | MOSFET N-CH 60V 10A TO-220FN | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FN | 30W (Tc) | N-Channel | 60V | 10A (Ta) | 95 mOhm @ 5A, 10V | 2.5V @ 1mA | - | 1600pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
2,414
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 5A PW-MOLD2 | U-MOSIII | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PW-MOLD2 | 20W (Tc) | N-Channel | 60V | 5A (Ta) | 100 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 15nC @ 10V | 730pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
2,378
In-stock
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Microchip Technology | MOSFET N-CH 60V 310MA TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | N-Channel | 60V | 310mA (Tj) | 5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 60pF @ 25V | 5V, 10V | ±30V | ||||
VIEW |
3,952
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 270MA TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 625mW (Ta) | N-Channel | 60V | 270mA (Ta) | 5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 60pF @ 25V | 5V, 10V | ±20V | ||||
VIEW |
1,047
In-stock
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Microchip Technology | MOSFET N-CH 60V 0.23A TO92-3 | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 400mW (Ta), 1W (Tc) | N-Channel | 60V | 230mA (Tj) | 7.5 Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 60pF @ 25V | 5V, 10V | ±30V |