Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Mounting Type Supplier Device Package FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Drive Voltage (Max Rds On, Min Rds On)
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 50A TO-220AB U-MOSIV Active Tube MOSFET (Metal Oxide) Through Hole TO-220-3 N-Channel 60V 50A (Tc) 8.5 mOhm @ 25A, 10V 54nC @ 10V -