- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,198
In-stock
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STMicroelectronics | MOSFET N-CH 60V 11A TO-220FP | STripFET™ II | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 60V | 11A (Tc) | 100 mOhm @ 8A, 10V | 4V @ 250µA | 13nC @ 10V | 315pF @ 25V | 10V | ±20V | ||||
VIEW |
3,737
In-stock
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ON Semiconductor | MOSFET N-CH 60V 11A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 38W (Tc) | N-Channel | - | 60V | 11A (Tc) | 107 mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | 5V | ±16V | ||||
VIEW |
968
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 11A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | P-Channel | - | 60V | 11A (Tc) | 280 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||||
VIEW |
1,686
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 11A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 60W (Tc) | P-Channel | - | 60V | 11A (Tc) | 280 mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | 570pF @ 25V | 10V | ±20V | ||||
VIEW |
2,333
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 11A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TO-251 (IPAK) | 25W (Tc) | N-Channel | - | 60V | 11A (Tc) | 90 mOhm @ 6A, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 500pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,560
In-stock
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ON Semiconductor | MOSFET N-CH 60V 11A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 28W (Tc) | N-Channel | - | 60V | 11A (Tc) | 115 mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | 5V, 10V | ±20V | ||||
VIEW |
1,863
In-stock
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ON Semiconductor | MOSFET N-CH 60V 11A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 38W (Tc) | N-Channel | - | 60V | 11A (Tc) | 107 mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | 5V | ±16V | ||||
VIEW |
1,915
In-stock
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ON Semiconductor | MOSFET N-CH 60V 11A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 28W (Tc) | N-Channel | - | 60V | 11A (Tc) | 115 mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4nC @ 5V | 350pF @ 25V | 5V, 10V | ±20V |