Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PHP3055E,127
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RFQ
1,825
In-stock
NXP USA Inc. MOSFET N-CH 60V 10.3A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 33W (Tc) N-Channel - 60V 10.3A (Tc) 150 mOhm @ 5.5A, 10V 4V @ 1mA 5.8nC @ 10V 250pF @ 25V 10V ±20V
IPA060N06NXKSA1
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RFQ
1,525
In-stock
Infineon Technologies MOSFET N-CH 60V TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 33W (Tc) N-Channel - 60V 45A (Tc) 6 mOhm @ 45A, 10V 3.3V @ 36µA 32nC @ 10V 2500pF @ 30V 6V, 10V ±20V
IXTU12N06T
RFQ
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RFQ
1,940
In-stock
IXYS MOSFET N-CH 60V 12A TO-251 TrenchMV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 33W (Tc) N-Channel - 60V 12A (Tc) 85 mOhm @ 6A, 10V 4V @ 25µA 3.4nC @ 10V 256pF @ 25V 10V ±20V
STF140N6F7
RFQ
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RFQ
1,959
In-stock
STMicroelectronics N-CHANNEL 60 V, 0.0031 OHM TYP., STripFET™ Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 33W (Tc) N-Channel - 60V 70A (Tc) 3.5 mOhm @ 35A, 10V 4V @ 250µA 55nC @ 10V 3100pF @ 25V 10V ±20V
IPA093N06N3GXKSA1
RFQ
VIEW
RFQ
1,221
In-stock
Infineon Technologies MOSFET N-CH 60V 43A TO220-3-31 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3-31 Full Pack 33W (Tc) N-Channel - 60V 43A (Tc) 9.3 mOhm @ 40A, 10V 4V @ 34µA 48nC @ 10V 3900pF @ 30V 10V ±20V