- Series :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,927
In-stock
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Renesas Electronics America | MOSFET N-CH 60V 100A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 60V | 110A (Ta) | 3.9 mOhm @ 50A, 10V | - | 90nC @ 10V | 6450pF @ 10V | 10V | ±20V | |||
|
VIEW |
900
In-stock
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Infineon Technologies | MOSFET N-CH 60V 80A TO262-3 | OptiMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3-1 | 150W (Tc) | N-Channel | 60V | 90A (Tc) | 3.7 mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | 13000pF @ 25V | 4.5V, 10V | ±16V | |||
|
VIEW |
1,192
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 50A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 60V | 50A (Tc) | 28 mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | 3300pF @ 25V | 4V, 5V | ±10V | |||
|
VIEW |
3,933
In-stock
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Infineon Technologies | MOSFET N-CH 60V 72A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 60V | 72A (Tc) | 12 mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | 1985pF @ 25V | 10V | ±20V | |||
|
VIEW |
883
In-stock
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ON Semiconductor | MOSFET N-CH 60V 75A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220 | 150W (Tc) | N-Channel | 60V | 75A (Tc) | 13 mOhm @ 40A, 10V | 4V @ 250µA | 115nC @ 10V | 3600pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,591
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 50A TO220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 60V | 50A (Tc) | 28 mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,646
In-stock
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ON Semiconductor | MOSFET N-CH 60V 65A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 60V | 65A (Tc) | 16 mOhm @ 32.5A, 10V | 4V @ 250µA | 65nC @ 10V | 2410pF @ 25V | 10V | ±25V | |||
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|
VIEW |
3,222
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 50A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 60V | 50A (Tc) | 28 mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,787
In-stock
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ON Semiconductor | MOSFET N-CH 60V 70A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 60V | 70A (Tc) | 14 mOhm @ 70A, 10V | 4V @ 250µA | 156nC @ 20V | 2250pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,135
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 50A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | 60V | 50A (Tc) | 28 mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | 1900pF @ 25V | 10V | ±20V | |||
