Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFI7536GPBF
RFQ
VIEW
RFQ
1,119
In-stock
Infineon Technologies MOSFET N-CH 60V 103A TO220 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 75W (Tc) N-Channel 60V 86A (Tc) 3.4 mOhm @ 75A, 10V 4V @ 150µA 195nC @ 10V 6600pF @ 48V 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,146
In-stock
Vishay Siliconix MOSFET N-CHANNEL 60V 14A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 37W (Tc) N-Channel 60V 14A (Tc) 100 mOhm @ 8.4A, 5V 2V @ 250µA 18nC @ 5V 870pF @ 25V 4V, 5V ±10V