- Series :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,804
In-stock
|
IXYS | MOSFET N-CH 1KV .1A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 | 25W (Tc) | N-Channel | - | 1000V | 100mA (Tc) | 80 Ohm @ 100mA, 10V | 4.5V @ 25µA | 6.9nC @ 10V | 54pF @ 25V | 10V | ±20V | ||||
VIEW |
2,627
In-stock
|
STMicroelectronics | MOSFET N-CH 1000V 1.85A IPAK | SuperMESH™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 1000V | 1.85A (Tc) | 8.5 Ohm @ 900mA, 10V | 4.5V @ 50µA | 16nC @ 10V | 499pF @ 25V | 10V | ±30V | ||||
VIEW |
3,382
In-stock
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IXYS | MOSFET N-CH 1000V 750MA TO-251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 | 40W (Tc) | N-Channel | - | 1000V | 750mA (Tc) | 17 Ohm @ 375mA, 10V | 4.5V @ 250µA | 7.8nC @ 10V | 260pF @ 25V | 10V | ±30V | ||||
VIEW |
3,609
In-stock
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IXYS | MOSFET N-CH 1000V 8A TO-251 | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 | - | N-Channel | - | 1000V | 8A (Tc) | - | - | - | - | - | - | ||||
VIEW |
1,772
In-stock
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ON Semiconductor | MOSFET N-CH 1000V 1.6A IPAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 2.5W (Ta), 50W (Tc) | N-Channel | - | 1000V | 1.6A (Tc) | 9 Ohm @ 800mA, 10V | 5V @ 250µA | 15.5nC @ 10V | 520pF @ 25V | 10V | ±30V | ||||
VIEW |
746
In-stock
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IXYS | MOSFET N-CH 1000V 0.1A TO-251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 | 1.1W (Ta), 25W (Tc) | N-Channel | Depletion Mode | 1000V | 100mA (Tc) | 80 Ohm @ 50mA, 0V | 5V @ 25µA | - | 120pF @ 25V | 0V | ±20V | ||||
VIEW |
2,151
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CH 1000V 1.85A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 77W (Tc) | N-Channel | - | 1000V | 1.85A (Tc) | 8.5 Ohm @ 900mA, 10V | 5.5V @ 250µA | 17nC @ 10V | 625pF @ 25V | 10V | ±30V |