Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,668
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IXYS MOSFET N-CH 200V 74A PLUS220 PolarHT™ HiPerFET™ Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 480W (Tc) N-Channel - 200V 74A (Tc) 34 mOhm @ 37A, 10V 5V @ 4mA 107nC @ 10V 3300pF @ 25V 10V ±20V
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1,629
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IXYS MOSFET N-CH 200V 35A ISOPLUS220 PolarHT™ HiPerFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS220™ ISOPLUS220™ 120W (Tc) N-Channel - 200V 35A (Tc) 36 mOhm @ 37A, 10V 5V @ 4mA 107nC @ 10V 3300pF @ 25V 10V ±20V
IXTQ74N20P
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3,671
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IXYS MOSFET N-CH 200V 74A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 480W (Tc) N-Channel - 200V 74A (Tc) 34 mOhm @ 37A, 10V 5V @ 250µA 107nC @ 10V 3300pF @ 25V 10V ±20V
IXFH74N20P
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725
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IXYS MOSFET N-CH 200V 74A TO-247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 480W (Tc) N-Channel - 200V 74A (Tc) 34 mOhm @ 37A, 10V 5V @ 4mA 107nC @ 10V 3300pF @ 25V 10V ±20V
IRFB31N20DPBF
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790
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Infineon Technologies MOSFET N-CH 200V 31A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.1W (Ta), 200W (Tc) N-Channel - 200V 31A (Tc) 82 mOhm @ 18A, 10V 5.5V @ 250µA 107nC @ 10V 2370pF @ 25V 10V ±30V