Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFR140N20P
RFQ
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RFQ
2,638
In-stock
IXYS MOSFET N-CH 200V 90A ISOPLUS247 PolarHT™ HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 300W (Tc) N-Channel - 200V 90A (Tc) 22 mOhm @ 45A, 10V 5V @ 4mA 240nC @ 10V 7500pF @ 25V 10V ±20V
IXTK140N20P
RFQ
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RFQ
2,578
In-stock
IXYS MOSFET N-CH 200V 140A TO-264 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 (IXTK) 800W (Tc) N-Channel - 200V 140A (Tc) 18 mOhm @ 70A, 10V 5V @ 500µA 240nC @ 10V 7500pF @ 25V 10V ±20V
IXFK140N20P
RFQ
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RFQ
3,245
In-stock
IXYS MOSFET N-CH 200V 140A TO-264 PolarHT™ HiPerFET™ Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 830W (Tc) N-Channel - 200V 140A (Tc) 18 mOhm @ 70A, 10V 5V @ 4mA 240nC @ 10V 7500pF @ 25V 10V, 15V ±20V
IRFBA90N20DPBF
RFQ
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RFQ
2,354
In-stock
Infineon Technologies MOSFET N-CH 200V 98A SUPER-220 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole Super-220™-3 (Straight Leads) SUPER-220™ (TO-273AA) 650W (Tc) N-Channel - 200V 98A (Tc) 23 mOhm @ 59A, 10V 5V @ 250µA 240nC @ 10V 6080pF @ 25V 10V ±30V