Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXTH130N20T
RFQ
VIEW
RFQ
1,739
In-stock
IXYS MOSFET N-CH 200V 130A TO-247 TrenchHV™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 830W (Tc) N-Channel 200V 130A (Tc) 16 mOhm @ 500mA, 10V 5V @ 1mA 150nC @ 10V 8800pF @ 25V 10V ±20V
IRFSL4127PBF
RFQ
VIEW
RFQ
1,343
In-stock
Infineon Technologies MOSFET N-CH 200V 72A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 375W (Tc) N-Channel 200V 72A (Tc) 22 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V - -
IRFP4127PBF
RFQ
VIEW
RFQ
2,428
In-stock
Infineon Technologies MOSFET N-CH 200V 75A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 341W (Tc) N-Channel 200V 75A (Tc) 21 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V
IRFB4127PBF
RFQ
VIEW
RFQ
814
In-stock
Infineon Technologies MOSFET N-CH 200V 76A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 375W (Tc) N-Channel 200V 76A (Tc) 20 mOhm @ 44A, 10V 5V @ 250µA 150nC @ 10V 5380pF @ 50V 10V ±20V
IXTH24P20
RFQ
VIEW
RFQ
2,516
In-stock
IXYS MOSFET P-CH 200V 24A TO-247AD - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) P-Channel 200V 24A (Tc) 150 mOhm @ 500mA, 10V 5V @ 250µA 150nC @ 10V 4200pF @ 25V 10V ±20V