Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RCX120N20
RFQ
VIEW
RFQ
1,643
In-stock
Rohm Semiconductor MOSFET N-CH 200V 12A TO-220FM - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 2.23W (Ta), 40W (Tc) N-Channel 200V 12A (Tc) 325 mOhm @ 6A, 10V 5.25V @ 1mA 15nC @ 10V 740pF @ 25V 10V ±30V
IRFD9220
RFQ
VIEW
RFQ
2,283
In-stock
Vishay Siliconix MOSFET P-CH 200V 0.56A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) P-Channel 200V 560mA (Ta) 1.5 Ohm @ 340mA, 10V 4V @ 250µA 15nC @ 10V 340pF @ 25V 10V ±20V
IRFI9620G
RFQ
VIEW
RFQ
2,863
In-stock
Vishay Siliconix MOSFET P-CH 200V 3A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) P-Channel 200V 3A (Tc) 1.5 Ohm @ 1.8A, 10V 4V @ 250µA 15nC @ 10V 340pF @ 15V 10V ±20V
IRFI9620GPBF
RFQ
VIEW
RFQ
965
In-stock
Vishay Siliconix MOSFET P-CH 200V 3A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 30W (Tc) P-Channel 200V 3A (Tc) 1.5 Ohm @ 1.8A, 10V 4V @ 250µA 15nC @ 10V 340pF @ 15V 10V ±20V
IRFD9220PBF
RFQ
VIEW
RFQ
905
In-stock
Vishay Siliconix MOSFET P-CH 200V 0.56A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) P-Channel 200V 560mA (Ta) 1.5 Ohm @ 340mA, 10V 4V @ 250µA 15nC @ 10V 340pF @ 25V 10V ±20V