Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF620
RFQ
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RFQ
921
In-stock
STMicroelectronics MOSFET N-CH 200V 6A TO-220 PowerMESH™ II Obsolete Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 70W (Tc) N-Channel - 200V 6A (Tc) 800 mOhm @ 3A, 10V 4V @ 250µA 27nC @ 10V 350pF @ 25V 10V ±20V
IRFU9N20D
RFQ
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RFQ
2,730
In-stock
Infineon Technologies MOSFET N-CH 200V 9.4A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 86W (Tc) N-Channel - 200V 9.4A (Tc) 380 mOhm @ 5.6A, 10V 5.5V @ 250µA 27nC @ 10V 560pF @ 25V 10V ±30V