Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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PSMN040-200W,127
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RFQ
2,461
In-stock
NXP USA Inc. MOSFET N-CH 200V 50A SOT429 TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247-3 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 25A, 10V 4V @ 1mA 183nC @ 10V 9530pF @ 25V 10V ±20V
STW50NB20
RFQ
VIEW
RFQ
1,954
In-stock
STMicroelectronics MOSFET N-CH 200V 50A TO-247 PowerMESH™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247-3 280W (Tc) N-Channel - 200V 50A (Tc) 55 mOhm @ 25A, 10V 5V @ 250µA 115nC @ 10V 3400pF @ 25V 10V ±30V
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RFQ
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RFQ
845
In-stock
IXYS POWER MOSFET TO-3 GigaMOS™ Last Time Buy - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-204AE TO-204AE 300W (Tc) N-Channel - 200V 50A (Tc) 45 mOhm @ 25A, 10V 4V @ 250µA 220nC @ 10V 4600pF @ 25V 10V ±20V
IXTQ50N20P
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VIEW
RFQ
1,449
In-stock
IXYS MOSFET N-CH 200V 50A TO-3P PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 360W (Tc) N-Channel - 200V 50A (Tc) 60 mOhm @ 50A, 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V 10V ±20V
IXTH50N20
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VIEW
RFQ
3,538
In-stock
IXYS MOSFET N-CH 200V 50A TO-247AD MegaMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXTH) 300W (Tc) N-Channel - 200V 50A (Tc) 45 mOhm @ 25A, 10V 4V @ 250µA 220nC @ 10V 4600pF @ 25V 10V ±20V
IXFR58N20
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RFQ
2,518
In-stock
IXYS MOSFET N-CH 200V 50A ISOPLUS247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS247™ ISOPLUS247™ 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 29A, 10V 4V @ 4mA 140nC @ 10V 3600pF @ 25V 10V ±20V
IXTP50N20P
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VIEW
RFQ
1,514
In-stock
IXYS MOSFET N-CH 200V 50A TO-220 PolarHT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 360W (Tc) N-Channel - 200V 50A (Tc) 60 mOhm @ 50A, 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V 10V ±20V
IRFP260MPBF
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VIEW
RFQ
3,593
In-stock
Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V
IXFH50N20
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VIEW
RFQ
1,685
In-stock
IXYS MOSFET N-CH 200V 50A TO-247AD HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 300W (Tc) N-Channel - 200V 50A (Tc) 45 mOhm @ 25A, 10V 4V @ 4mA 220nC @ 10V 4400pF @ 25V 10V ±20V
IRFP260NPBF
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VIEW
RFQ
2,800
In-stock
Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V