Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RCX120N20
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RFQ
1,643
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Rohm Semiconductor MOSFET N-CH 200V 12A TO-220FM - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FM 2.23W (Ta), 40W (Tc) N-Channel 200V 12A (Tc) 325 mOhm @ 6A, 10V 5.25V @ 1mA 15nC @ 10V 740pF @ 25V 10V ±30V
IRFP9240
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RFQ
3,438
In-stock
Vishay Siliconix MOSFET P-CH 200V 12A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) P-Channel 200V 12A (Tc) 500 mOhm @ 7.2A, 10V 4V @ 250µA 44nC @ 10V 1200pF @ 25V 10V ±20V
IRF200B211
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RFQ
3,428
In-stock
Infineon Technologies MOSFET N-CH 200V 12A TO-220AB HEXFET®, StrongIRFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel 200V 12A (Tc) 170 mOhm @ 7.2A, 10V 4.9V @ 50µA 23nC @ 10V 790pF @ 50V 10V ±20V
IRFP9240PBF
RFQ
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RFQ
2,969
In-stock
Vishay Siliconix MOSFET P-CH 200V 12A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 150W (Tc) P-Channel 200V 12A (Tc) 500 mOhm @ 7.2A, 10V 4V @ 250µA 44nC @ 10V 1200pF @ 25V 10V ±20V