- Part Status :
- Packaging :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
717
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 100A TO-264 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,500
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,062
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 100A T-MAX | POWER MOS V® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
|
VIEW |
651
In-stock
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STMicroelectronics | MOSFET N-CH 200V 100A MAX247 | MESH OVERLAY™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | MAX247™ | 450W (Tc) | N-Channel | - | 200V | 100A (Tc) | 24 mOhm @ 50A, 10V | 4V @ 250µA | 360nC @ 10V | 7900pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,208
In-stock
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Microsemi Corporation | MOSFET N-CH 200V 100A TO-264 | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 [L] | 520W (Tc) | N-Channel | - | 200V | 100A (Tc) | 22 mOhm @ 500mA, 10V | 4V @ 2.5mA | 435nC @ 10V | 10200pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,648
In-stock
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Infineon Technologies | MOSFET N-CH 200V 100A TO247AC | StrongIRFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 313W (Tc) | N-Channel | - | 200V | 100A (Tc) | 11.5 mOhm @ 60A, 10V | 4V @ 270µA | 102nC @ 10V | 5094pF @ 50V | 10V | ±20V | |||
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VIEW |
967
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 100A TO247AC | ThunderFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 395W (Tc) | N-Channel | - | 200V | 100A (Tc) | 9.5 mOhm @ 20A, 10V | 4V @ 250µA | 129nC @ 10V | 5220pF @ 100V | 7.5V, 10V | ±20V | |||
|
VIEW |
3,654
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 100A TO247AC | ThunderFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 395W (Tc) | N-Channel | - | 200V | 100A (Tc) | 9.5 mOhm @ 20A, 10V | 4V @ 250µA | 129nC @ 10V | 5220pF @ 100V | 7.5V, 10V | ±20V |