Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2,530
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ON Semiconductor MOSFET P-CH 200V 2.15A TO220F - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) P-Channel - 200V 2.15A (Tc) 1.4 Ohm @ 1.7A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V
FQPF630
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3,368
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ON Semiconductor MOSFET N-CH 200V 6.3A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel - 200V 6.3A (Tc) 400 mOhm @ 3.15A, 10V 4V @ 250µA 25nC @ 10V 550pF @ 25V 10V ±25V
FQPF5P20
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1,264
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ON Semiconductor MOSFET P-CH 200V 3.4A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) P-Channel - 200V 3.4A (Tc) 1.4 Ohm @ 1.7A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V
FQPF10N20C
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2,266
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ON Semiconductor MOSFET N-CH 200V 9.5A TO-220F QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 38W (Tc) N-Channel - 200V 9.5A (Tc) 360 mOhm @ 4.75A, 10V 4V @ 250µA 26nC @ 10V 510pF @ 25V 10V ±30V