Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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MTP6P20E
RFQ
VIEW
RFQ
707
In-stock
ON Semiconductor MOSFET P-CH 200V 6A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) P-Channel - 200V 6A (Tc) 1 Ohm @ 3A, 10V 4V @ 250µA 30nC @ 10V 750pF @ 25V 10V ±20V
BUZ32
RFQ
VIEW
RFQ
1,341
In-stock
Infineon Technologies MOSFET N-CH 200V 9.5A TO220AB SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 75W (Tc) N-Channel - 200V 9.5A (Tc) 400 mOhm @ 6A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
FQP5P20
RFQ
VIEW
RFQ
3,289
In-stock
ON Semiconductor MOSFET P-CH 200V 4.8A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 75W (Tc) P-Channel - 200V 4.8A (Tc) 1.4 Ohm @ 2.4A, 10V 5V @ 250µA 13nC @ 10V 430pF @ 25V 10V ±30V
BUZ32 H
RFQ
VIEW
RFQ
3,467
In-stock
Infineon Technologies MOSFET N-CH 200V 9.5A TO220-3 SIPMOS® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 75W (Tc) N-Channel - 200V 9.5A (Tc) 400 mOhm @ 6A, 10V 4V @ 1mA - 530pF @ 25V 10V ±20V
IRF630
RFQ
VIEW
RFQ
1,111
In-stock
STMicroelectronics MOSFET N-CH 200V 9A TO-220 MESH OVERLAY™ II Active Tube MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 75W (Tc) N-Channel - 200V 9A (Tc) 400 mOhm @ 4.5A, 10V 4V @ 250µA 45nC @ 10V 700pF @ 25V 10V ±20V