Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFSL23N20D102P
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RFQ
1,147
In-stock
Infineon Technologies MOSFET N-CH 200V 24A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 170W (Tc) N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V
IRFSL17N20DPBF
RFQ
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RFQ
1,641
In-stock
Infineon Technologies MOSFET N-CH 200V 16A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 140W (Tc) N-Channel - 200V 16A (Tc) 170 mOhm @ 9.8A, 10V 5.5V @ 250µA 50nC @ 10V 1100pF @ 25V 10V ±30V
IRFSL23N20D
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RFQ
3,929
In-stock
Infineon Technologies MOSFET N-CH 200V 24A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 170W (Tc) N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V
IRFSL17N20D
RFQ
VIEW
RFQ
3,101
In-stock
Infineon Technologies MOSFET N-CH 200V 16A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 140W (Tc) N-Channel - 200V 16A (Tc) 170 mOhm @ 9.8A, 10V 5.5V @ 250µA 50nC @ 10V 1100pF @ 25V 10V ±30V
IRFB23N20D
RFQ
VIEW
RFQ
612
In-stock
Infineon Technologies MOSFET N-CH 200V 24A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 170W (Tc) N-Channel - 200V 24A (Tc) 100 mOhm @ 14A, 10V 5.5V @ 250µA 86nC @ 10V 1960pF @ 25V 10V ±30V
IRFB17N20D
RFQ
VIEW
RFQ
3,364
In-stock
Infineon Technologies MOSFET N-CH 200V 16A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 3.8W (Ta), 140W (Tc) N-Channel - 200V 16A (Tc) 170 mOhm @ 9.8A, 10V 5.5V @ 250µA 50nC @ 10V 1100pF @ 25V 10V ±30V
IRFU9N20D
RFQ
VIEW
RFQ
2,730
In-stock
Infineon Technologies MOSFET N-CH 200V 9.4A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 86W (Tc) N-Channel - 200V 9.4A (Tc) 380 mOhm @ 5.6A, 10V 5.5V @ 250µA 27nC @ 10V 560pF @ 25V 10V ±30V
IRFSL31N20D
RFQ
VIEW
RFQ
2,801
In-stock
Infineon Technologies MOSFET N-CH 200V 31A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 200W (Tc) N-Channel - 200V 31A (Tc) 82 mOhm @ 18A, 10V 5.5V @ 250µA 110nC @ 10V 2370pF @ 25V 10V ±30V
IRFB42N20D
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RFQ
2,957
In-stock
Infineon Technologies MOSFET N-CH 200V 44A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2.4W (Ta), 330W (Tc) N-Channel - 200V 44A (Tc) 55 mOhm @ 26A, 10V 5.5V @ 250µA 140nC @ 10V 3430pF @ 25V 10V ±30V
IRFU15N20DPBF
RFQ
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RFQ
2,269
In-stock
Infineon Technologies MOSFET N-CH 200V 17A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 110W (Tc) N-Channel - 200V 17A (Tc) 165 mOhm @ 10A, 10V 5.5V @ 250µA 41nC @ 10V 910pF @ 25V 10V ±30V