- Manufacture :
- Series :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,438
In-stock
|
NXP USA Inc. | MOSFET N-CH 200V 5.2A TO220F | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 25W (Tc) | N-Channel | 200V | 5.2A (Tc) | 400 mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | 959pF @ 25V | 10V | ±20V | ||||
VIEW |
3,093
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 5.2A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 50W (Tc) | N-Channel | 200V | 5.2A (Tc) | 800 mOhm @ 3.1A, 5V | 2V @ 250µA | 16nC @ 5V | 360pF @ 25V | 4V, 5V | ±10V | ||||
VIEW |
2,749
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 5.2A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 50W (Tc) | N-Channel | 200V | 5.2A (Tc) | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V |