- Part Status :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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13 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,172
In-stock
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Infineon Technologies | MOSFET N-CH 200V 62A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 330W (Tc) | N-Channel | - | 200V | 62A (Tc) | 26 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | ||||
VIEW |
2,458
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||||
VIEW |
1,147
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||||
VIEW |
1,641
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | - | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||||
VIEW |
3,929
In-stock
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Infineon Technologies | MOSFET N-CH 200V 24A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 170W (Tc) | N-Channel | - | 200V | 24A (Tc) | 100 mOhm @ 14A, 10V | 5.5V @ 250µA | 86nC @ 10V | 1960pF @ 25V | 10V | ±30V | ||||
VIEW |
3,101
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | - | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||||
VIEW |
1,294
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V | ||||
VIEW |
2,801
In-stock
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Infineon Technologies | MOSFET N-CH 200V 31A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.1W (Ta), 200W (Tc) | N-Channel | - | 200V | 31A (Tc) | 82 mOhm @ 18A, 10V | 5.5V @ 250µA | 110nC @ 10V | 2370pF @ 25V | 10V | ±30V | ||||
VIEW |
1,211
In-stock
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Infineon Technologies | MOSFET N-CH 200V 43A TO-262-3 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 200V | 43A (Tc) | 54 mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | - | - | ||||
VIEW |
747
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | ||||
VIEW |
1,377
In-stock
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Infineon Technologies | MOSFET N-CH 200V 9.3A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 82W (Tc) | N-Channel | - | 200V | 9.3A (Tc) | 300 mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | 575pF @ 25V | 10V | ±20V | ||||
VIEW |
1,343
In-stock
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Infineon Technologies | MOSFET N-CH 200V 72A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 375W (Tc) | N-Channel | - | 200V | 72A (Tc) | 22 mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | 5380pF @ 50V | - | - | ||||
VIEW |
3,338
In-stock
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Infineon Technologies | MOSFET N-CH 200V 18A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 150W (Tc) | N-Channel | - | 200V | 18A (Tc) | 150 mOhm @ 11A, 10V | 4V @ 250µA | 67nC @ 10V | 1160pF @ 25V | 10V | ±20V |