Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,668
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IXYS MOSFET N-CH 200V 74A PLUS220 PolarHT™ HiPerFET™ Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3, Short Tab PLUS220 480W (Tc) N-Channel - 200V 74A (Tc) 34 mOhm @ 37A, 10V 5V @ 4mA 107nC @ 10V 3300pF @ 25V 10V ±20V
IXFK140N20P
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3,245
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IXYS MOSFET N-CH 200V 140A TO-264 PolarHT™ HiPerFET™ Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-264-3, TO-264AA TO-264AA (IXFK) 830W (Tc) N-Channel - 200V 140A (Tc) 18 mOhm @ 70A, 10V 5V @ 4mA 240nC @ 10V 7500pF @ 25V 10V, 15V ±20V
IRFP250NPBF
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RFQ
2,799
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Infineon Technologies MOSFET N-CH 200V 30A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 214W (Tc) N-Channel - 200V 30A (Tc) 75 mOhm @ 18A, 10V 4V @ 250µA 123nC @ 10V 2159pF @ 25V 10V ±20V
IRFP90N20DPBF
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3,501
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Infineon Technologies MOSFET N-CH 200V 94A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 580W (Tc) N-Channel - 200V 94A (Tc) 23 mOhm @ 56A, 10V 5V @ 250µA 270nC @ 10V 6040pF @ 25V 10V ±30V
IRFP260NPBF
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2,800
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Infineon Technologies MOSFET N-CH 200V 50A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 300W (Tc) N-Channel - 200V 50A (Tc) 40 mOhm @ 28A, 10V 4V @ 250µA 234nC @ 10V 4057pF @ 25V 10V ±20V