Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFD9210
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RFQ
1,293
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Vishay Siliconix MOSFET P-CH 200V 0.4A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) P-Channel 200V 400mA (Ta) 3 Ohm @ 240mA, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 10V ±20V
IRFD220
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RFQ
1,204
In-stock
Vishay Siliconix MOSFET N-CH 200V 800MA 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 200V 800mA (Ta) 800 mOhm @ 480mA, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V
IRFD210
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RFQ
3,429
In-stock
Vishay Siliconix MOSFET N-CH 200V 600MA 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 200V 600mA (Ta) 1.5 Ohm @ 360mA, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 10V ±20V
IRFD9220
RFQ
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RFQ
2,283
In-stock
Vishay Siliconix MOSFET P-CH 200V 0.56A 4-DIP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) P-Channel 200V 560mA (Ta) 1.5 Ohm @ 340mA, 10V 4V @ 250µA 15nC @ 10V 340pF @ 25V 10V ±20V
IRFD210PBF
RFQ
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RFQ
1,544
In-stock
Vishay Siliconix MOSFET N-CH 200V 600MA 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 200V 600mA (Ta) 1.5 Ohm @ 360mA, 10V 4V @ 250µA 8.2nC @ 10V 140pF @ 25V 10V ±20V
IRFD9220PBF
RFQ
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RFQ
905
In-stock
Vishay Siliconix MOSFET P-CH 200V 0.56A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) P-Channel 200V 560mA (Ta) 1.5 Ohm @ 340mA, 10V 4V @ 250µA 15nC @ 10V 340pF @ 25V 10V ±20V
IRFD9210PBF
RFQ
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RFQ
1,495
In-stock
Vishay Siliconix MOSFET P-CH 200V 0.4A 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) P-Channel 200V 400mA (Ta) 3 Ohm @ 240mA, 10V 4V @ 250µA 8.9nC @ 10V 170pF @ 25V 10V ±20V
IRFD220PBF
RFQ
VIEW
RFQ
601
In-stock
Vishay Siliconix MOSFET N-CH 200V 800MA 4-DIP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.300", 7.62mm) 4-DIP, Hexdip, HVMDIP 1W (Ta) N-Channel 200V 800mA (Ta) 800 mOhm @ 480mA, 10V 4V @ 250µA 14nC @ 10V 260pF @ 25V 10V ±20V