- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,102
In-stock
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ON Semiconductor | MOSFET N-CH 100V 36A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 163W (Tc) | N-Channel | - | 100V | 36A (Tc) | 52 mOhm @ 18A, 10V | 2V @ 250µA | 40nC @ 5V | 1630pF @ 25V | 5V, 10V | ±20V | |||
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|
VIEW |
647
In-stock
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ON Semiconductor | MOSFET N-CH 100V 36A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 163W (Tc) | N-Channel | - | 100V | 36A (Tc) | 52 mOhm @ 18A, 10V | 4V @ 250µA | 51nC @ 10V | 1500pF @ 25V | 10V | ±25V | |||
|
|
VIEW |
769
In-stock
|
ON Semiconductor | MOSFET N-CH 80V 49.8A TO-3P | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 163W (Tc) | N-Channel | - | 80V | 49.8A (Tc) | 34 mOhm @ 24.9A, 10V | 4V @ 250µA | 50nC @ 10V | 1430pF @ 25V | 10V | ±25V | |||
|
VIEW |
3,680
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 100A IPAK | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 163W (Tc) | N-Channel | - | 40V | 100A (Tc) | 1.98 mOhm @ 90A, 10V | 3.9V @ 100µA | 155nC @ 10V | 5171pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,890
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 163W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.5 mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | 5193pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,290
In-stock
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Infineon Technologies | MOSFET N-CH 40V 120A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 163W (Tc) | N-Channel | - | 40V | 120A (Tc) | 2.3 mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | 5193pF @ 25V | 10V | ±20V | |||
