Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BUK7575-55,127
RFQ
VIEW
RFQ
3,508
In-stock
NXP USA Inc. MOSFET N-CH 55V 19.7A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 61W (Tc) N-Channel - 55V 19.7A (Tc) 75 mOhm @ 10A, 10V 4V @ 1mA - 500pF @ 25V 10V ±16V
NDD04N50Z-1G
RFQ
VIEW
RFQ
1,731
In-stock
ON Semiconductor MOSFET N-CH 500V 3A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 61W (Tc) N-Channel - 500V 3A (Tc) 2.7 Ohm @ 1.5A, 10V 4.5V @ 50µA 12nC @ 10V 308pF @ 25V 10V ±30V
NDD03N60Z-1G
RFQ
VIEW
RFQ
1,894
In-stock
ON Semiconductor MOSFET N-CH 600V IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 61W (Tc) N-Channel - 600V 2.6A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 12nC @ 10V 312pF @ 25V 10V ±30V
IRFI4110GPBF
RFQ
VIEW
RFQ
773
In-stock
Infineon Technologies MOSFET N-CH 100V 72A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack TO-220AB Full-Pak 61W (Tc) N-Channel - 100V 72A (Tc) 4.5 mOhm @ 43A, 10V 4V @ 250µA 290nC @ 10V 9540pF @ 50V 10V ±20V