- Manufacture :
- Series :
- Part Status :
- Technology :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,226
In-stock
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Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 300W (Tc) | N-Channel | - | 700V | 65A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | |||
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VIEW |
3,081
In-stock
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IXYS | MOSFET N-CH 900V 12A PLUS247 | HiPerFET™ | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PLUS247™-3 | 300W (Tc) | N-Channel | - | 900V | 12A (Tc) | 900 mOhm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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VIEW |
2,800
In-stock
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Infineon Technologies | MOSFET N-CH 200V 50A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 300W (Tc) | N-Channel | - | 200V | 50A (Tc) | 40 mOhm @ 28A, 10V | 4V @ 250µA | 234nC @ 10V | 4057pF @ 25V | 10V | ±20V | |||
