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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXFH6N120	RFQ VIEW	PDF RFQ	3,771 In-stock	IXYS	MOSFET N-CH 1200V 6A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXFH)	300W (Tc)	N-Channel	-	1200V	6A (Tc)	2.6 Ohm @ 3A, 10V	5V @ 2.5mA	56nC @ 10V	1950pF @ 25V	10V	±20V
	IXFH6N90	RFQ VIEW	PDF RFQ	637 In-stock	IXYS	MOSFET N-CH 900V 6A TO-247AD		HiPerFET™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247AD (IXFH)	300W (Tc)	N-Channel	-	900V	6A (Tc)	2 Ohm @ 3A, 10V	4.5V @ 2.5mA	130nC @ 10V	2600pF @ 25V	10V	±20V
	IXTH6N120	RFQ VIEW	PDF RFQ	3,095 In-stock	IXYS	MOSFET N-CH 1200V 6A TO-247AD		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	N-Channel	-	1200V	6A (Tc)	2.6 Ohm @ 3A, 10V	5V @ 250µA	56nC @ 10V	1950pF @ 25V	10V	±20V
	IXTH6N100D2	RFQ VIEW	PDF RFQ	3,696 In-stock	IXYS	MOSFET N-CH 1000V 6A TO247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	N-Channel	Depletion Mode	1000V	6A (Tc)	2.2 Ohm @ 3A, 0V	-	95nC @ 5V	2650pF @ 25V	-	±20V
	IXTH6N50D2	RFQ VIEW	PDF RFQ	1,452 In-stock	IXYS	MOSFET N-CH 500V 6A TO247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 (IXTH)	300W (Tc)	N-Channel	Depletion Mode	500V	6A (Tc)	500 mOhm @ 3A, 0V	-	96nC @ 5V	2800pF @ 25V	-	±20V

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