Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPI180N10N3GXKSA1
RFQ
VIEW
RFQ
1,207
In-stock
Infineon Technologies MOSFET N-CH 100V 43A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 71W (Tc) N-Channel - 100V 43A (Tc) 18 mOhm @ 33A, 10V 3.5V @ 33µA 25nC @ 10V 1800pF @ 50V 6V, 10V ±20V
STI21NM60ND
RFQ
VIEW
RFQ
3,157
In-stock
STMicroelectronics MOSFET N-CH 600V 17A I2PAK FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 140W (Tc) N-Channel - 600V 17A (Tc) 220 mOhm @ 8.5A, 10V 5V @ 250µA 60nC @ 10V 1800pF @ 50V 10V ±25V
STI26NM60N
RFQ
VIEW
RFQ
2,345
In-stock
STMicroelectronics MOSFET N-CH 600V 20A I2PAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA I2PAK 140W (Tc) N-Channel - 600V 20A (Tc) 165 mOhm @ 10A, 10V 4V @ 250µA 60nC @ 10V 1800pF @ 50V 10V ±25V