- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
15 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
3,707
In-stock
|
ON Semiconductor | MOSFET P-CH 120V 15A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.75W (Ta), 100W (Tc) | P-Channel | - | 120V | 15A (Tc) | 200 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1100pF @ 25V | 10V | ±30V | ||||
VIEW |
1,692
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 24A TO262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||||
VIEW |
2,458
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 24A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 144W (Tc) | N-Channel | - | 200V | 24A (Tc) | 77.5 mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | 1710pF @ 50V | 10V | ±20V | ||||
VIEW |
2,277
In-stock
|
Vishay Siliconix | MOSFET N-CH 1000V 1.4A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | - | 1000V | 1.4A (Ta) | 11 Ohm @ 840mA, 10V | 4V @ 250µA | 38nC @ 10V | 500pF @ 25V | 10V | ±20V | ||||
VIEW |
3,729
In-stock
|
Vishay Siliconix | MOSFET N-CH 800V 1.8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | - | 800V | 1.8A (Tc) | 6.5 Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | 530pF @ 25V | 10V | ±20V | ||||
VIEW |
703
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 12A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | P-Channel | - | 100V | 12A (Tc) | 300 mOhm @ 7.2A, 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | 10V | ±20V | ||||
VIEW |
3,310
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | - | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | 10V | ±30V | ||||
VIEW |
2,241
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 4.5A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 74W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.5 Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | 610pF @ 25V | 10V | ±20V | ||||
VIEW |
1,583
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A I2PAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 190 mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||||
VIEW |
981
In-stock
|
Vishay Siliconix | MOSFET N-CH 900V 1.7A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 54W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 8 Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | 10V | ±20V | ||||
VIEW |
1,528
In-stock
|
STMicroelectronics | MOSFET N-CH 500V 15A I2PAK | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 125W (Tc) | N-Channel | - | 500V | 15A (Tc) | 260 mOhm @ 7.5A, 10V | 4V @ 250µA | 38nC @ 10V | 1200pF @ 50V | 10V | ±25V | ||||
VIEW |
3,191
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 4.5A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 | 3.1W (Ta), 74W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.5 Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | 610pF @ 25V | 10V | ±20V | ||||
VIEW |
1,317
In-stock
|
Vishay Siliconix | MOSFET N-CH 900V 1.7A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 54W (Tc) | N-Channel | - | 900V | 1.7A (Tc) | 8 Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | 490pF @ 25V | 10V | ±20V | ||||
VIEW |
1,266
In-stock
|
Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.1W (Ta), 125W (Tc) | N-Channel | - | 500V | 8A (Tc) | 850 mOhm @ 4.8A, 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | 10V | ±30V | ||||
VIEW |
875
In-stock
|
ON Semiconductor | MOSFET N-CH 600V 7.4A I2PAK | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 142W (Tc) | N-Channel | - | 600V | 7.4A (Tc) | 1 Ohm @ 3.7A, 10V | 5V @ 250µA | 38nC @ 10V | 1430pF @ 25V | 10V | ±30V |